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| TDA8177F VERTICAL DEFLECTION BOOSTER . . . . . . POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENT UP TO 3.0APP FLYBACK VOLTAGE UP TO 70V (on Pin 5) SUITABLE FOR DC COUPLING APPLICATION EXTERNAL FLYBACK SUPPLY HEPTAWATT (Plastic Package) ORDER CODE : TDA8177F DESCRIPTION Designed for monitors and high performance TVs, the TDA8177F vertical deflection booster can handle flyback voltage up to 70V. More than this it is possible to have a flyback voltage which is more than the double of the supply (Pin 2). This allows to decrease the power consumption or to decrease the flyback time for a given supply voltage. PIN CONNECTIONS 7 6 5 4 3 2 1 Tab connected to Pin 4 The TDA8177F operates with supplies up to 35V and provides up to 3APP output current to drive the yoke. The TDA8177F is offered in HEPTAWATT package. BLOCK DIAGRAM SUPPLY VOLTAGE 2 OUTPUT STAGE SUPPLY 6 FLYBACK SUPPLY 3 INVERTING INPUT 1 POWER AMPLIFIER 5 THERMAL PROTECTION OUTPUT NON-INVERTING INPUT 7 8177F-02.EPS TDA8177F 4 GROUND December 1998 1/5 8177F-01.EPS NON-INVERTING INPUT OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK SUPPLY SUPPLY VOLTAGE INVERTING INPUT TDA8177F ABSOLUTE MAXIMUM RATINGS Symbol VS V6 V1 , V7 IO I3 I3 VESD1 VESD2 V3 - V2 Toper Tstg Tj Notes : 1. 2. 3. 4. 5. Parameter Supply Voltage (Pin 2) (see note 1) Flyback Peak Voltage (Pin 6) (see note 1) Amplifier Input Voltage (Pins 1-7) (see note 1) Maximum Output Peak Current (see notes 2 and 3) Maximum Sink Current (t < 1ms) Maximum Source Current (t < 1ms) (in the diode, see Block Diagram) ESD Susceptibility Tool Model (see note 4) Human Model (see note 5) Value 40 75 - 0.3, + VS 2.5 2.5 2.5 300 2 50 -0.4 - 20, + 75 - 40, + 150 +150 Unit V V V A A A V kV V V o o o Voltage Difference between Flyback Supply and Supply Voltage Operating Ambient Temperature Storage Temperature Junction Temperature Versus Pin 4. The output current can reach 4A peak for t 10s (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). Equivalent to discharging a 200pF capacitor through a 0 series resistor. Equivalent to discharging a 150pF capacitor through a 1.5k series resistor. V3, V5, V6 Min. Voltage (see note 1) C C C 8177F-01.TBL 8177F-03.TBL 8177F-02.TBL THERMAL DATA Symbol Rth (j-c) Tt Tt Tjr Parameter Junction-case Thermal Resistance Temperature for Thermal Shutdown Hysteresis on Tt Recommended Max. Junction Temperature Max. Value 3 150 10 120 Unit o C/W o o o C C C ELECTRICAL CHARACTERISTICS (VS = 35V, TA = 25oC, unless otherwise specified) Symbol VS V3M I2 I6 IO I1 I7 VIO VIO/dt GV V5L V5H VD5 - 6 VD3 - 6 V3-6 Parameter Operating Supply Voltage Range Operating Flyback Supply Voltage Pin 2 Quiescent Current Pin 6 Quiescent Current Max. Scanning Peak Output Current Amplifier Bias Current Amplifier Bias Current Offset Voltage Offset Drift versus Temperature Voltage Gain Output Saturation Voltage to GND (Pin 4) Output Saturation Voltage to Supply (Pin 6) Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-6 I5 = 1.5A I5 = - 1.5A I5 = 1.5A I3 = 1.5A 80 1.0 1.7 1.5 2.3 4 2 2.5 2.1 3 5 V1 = 20V, V7 = 21V V1 = 21V, V7 = 20V - 0.4 - 0.4 0 - 10 I3 = 0, I5 = 0 I3 = 0, I5 = 0 Test Conditions Min. 10 VS 10 25 Typ. Max. 35 70 20 35 1.5 -2 -2 7 Unit V V mA mA A A A mV V/oC dB V V V V V Voltage Drop between Pins 3-6 (2nd part of flyback) I3 = - 1.5A 2/5 TDA8177F APPLICATION CIRCUITS AC COUPLING + VS Flyback Supply 2 6 3 R5 1 POWER AMPLIFIER 7 VREF 2.2V THERMAL PROTECTION 5 0.47m F 1.5W YOKE 330W TDA8177F 4 R3 R4 R2 CL R1 DC COUPLING + VS Flyback Supply 2 6 3 R5 1 VREF+ Vertical Position Adjustment POWER AMPLIFIER 7 THERMAL PROTECTION 5 0.47m F 1.5W YOKE 330W TDA8177F VREF-VEE 4 R2 R1 3/5 8177F-04.EPS 8177F-03.EPS TDA8177F Figure 1 : Output Transistors SOA (for secondary breakdown) IC (A) @ Tcase = 25C 90 Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current) ISB (%) 100 10 1 80 10-1 8177F-05.EPS VCE (V) 10 102 Tcase (C) 60 25 50 75 100 125 10-2 1 4/5 8177F-06.EPS t = 1ms t = 10ms t = 100ms 70 TDA8177F PACKAGE MECHANICAL DATA : HEPTAWAT Dimensions A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Min. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. Inches Typ. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 3 15.8 6.6 0.102 0.594 0.236 0.110 0.200 0.118 0.622 0.260 HEPTV.TBL 3.85 0.144 0.152 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - All Rights Reserved Purchase of I2C Components of STMicroelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5 PM-HEPTV.EPS |
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